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Different Techniques for Investigation of Plasma Diffusion Coefficient in IR-T1 Tokamak

机译:IR-T1 TOKAMAK中等离子体扩散系数研究的不同技术

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Diffusion due to the run-away electrons in Tokamak can cause serious damages to the Tokamak walls. In this study, aiming for improving the plasma confinement, the diffusion coefficient was calculated in two different approaches using two different probes. In the first approach; Langmuir probe, was utilized to measure the poloidal electric field, radial flux and consequently the diffusion coefficient. On a more approach, the diffusion coefficient has been estimated by using the ball-pen probe and the Fourier-transform and the assumption of entirely diffusive plasma penetration inside the boron nitride shielding. In order to improve the plasma confinement, external biased voltages of ± 200 V were applied when the plasma experienced its stable phase. Comparing the results, a clear unity can be seen from both the Langmuir approach and the Ball-pen approach. As the results indicate, the diffusion coefficient in Langmuir approach decreased up to 40% when the positive biased voltage of 200 V was applied. However, when the negative biased voltage of 200 V was applied, the diffusion coefficient increased significantly (up to 60%). Ball-pen approach results signify the same results from Langmuir probe. Where, by applying the positive biased voltage of 200 V the diffusion coefficient decreased by almost 40% and on the contrary, the negative biased voltage of 200 V increased the diffusion coefficient up to 30% in general. It can be said that the positive biased voltage contributed to improve the plasma confinement in Tokamak.
机译:由于托卡马克的杂散电子导致的扩散可能对Tokamak墙壁造成严重损害。在本研究中,旨在改善等离子体限制,扩散系数以两种不同的探针用两种不同的方法计算。在第一种方法; Langmuir探针用于测量单极电场,径向通量,从而弥漫度系数。在更多的方法中,通过使用球笔探头和傅立叶变换以及硼氮化硼屏蔽内的完全扩散等离子体穿透的假设估计了扩散系数。为了改善等离子体限制,当等离子体经历其稳定相时,施加±200 V的外部偏置电压。比较结果,可以从Langmuir方法和球笔方法看出明确的统一。结果表明,当施加正偏置电压时,Langmuir方法中的扩散系数降低至40%。然而,当施加200V的负偏置电压时,扩散系数显着增加(高达60%)。 Ball-Pen方法结果标记了Langmuir探针的相同结果。在其中,通过施加200 V的正偏置电压来降低近40%且相反,200 V的负偏置电压通常增加到30%的扩散系数。可以说,正偏置电压有助于改善托卡马克的等离子体限制。

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