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First principles investigation of the Co(0001)/MoS_2 and Ni(lll)/WSe_2 interfaces for spin injection in a transition metal dichalcogenide monolayer

机译:第一个原理研究CO(0001)/ MOS_2和NI(LLL)/ WSE_2旋转注射液中的纺丝金属二甲基化物单层的界面

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The hexagonal close-packed (hcp) Co(0001)/MoS_2 and face-centered cubic (fcc) Ni(111)/WSe_2 interface atomic, magnetic and electronic structures are investigated using first-principles methods based on the density functional theory. We show that the MoS_2 and WSe_2 single layers are covalently bond to the Co(0001) and Ni(111) metal surfaces. We describe the consequences of this bonding on the spin magnetic moments and on the electron states at the vicinity of these interfaces, where MoS_2 and WSe_2 become metallic due to hybridization between Co (or Ni) and S (or Se) atomic orbitals. A finite spin-polarization at the Fermi level is calculated in the MoS_2 and WSe_2 layers at these two interfaces. We also give and estimation of the Schottky barrier height that may appear at the border between the metallic and semiconducting phases of MoS_2 (or WSe_2) near the edge of a Co/MoS_2 or Ni/WSe_2 metallic contact.
机译:利用基于密度函数理论,研究了使用基于密度函数理论的第一原理方法研究了六边形近填充(HCP)CO(0001)/ MOS_2和面为中心的立方(FCC)Ni(111)/ WSE_2接口原子,磁性和电子结构。我们表明MOS_2和WSE_2单层与CO(0001)和Ni(111)金属表面共价键合。我们描述了这种粘合对旋转磁矩和在这些界面附近的电子状态的后果,其中MOS_2和WSE_2由于CO(或SE)和S(或SE)原子轨道之间的杂交而成为金属。在这两个接口的MOS_2和WSE_2层中计算FERMI水平的有限旋转偏振。我们还提供和估计在Co / MOS_2或Ni / WSE_2金属接触边缘附近的MOS_2(或WSE_2)的金属和半导体相之间的边界处的肖特基势垒高度。

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