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Numeric Model for the Imaging Mechanism of Metal Oxide EUV Resists

机译:金属氧化物EUV抗蚀剂成像机理的数值模型

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A numeric model is proposed describing the chemical and physical mechanisms governing image formation in metal-oxide (MOx) EUV photoresist systems. Experimental measurements of physical and chemical properties are used to develop a quantitative representation of the chemical and physical state of the MOx resist film at each step in the lithographic process. The role of radiation-induced condensation to drive non-linear changes in development rate is elucidated. Lithographic performance parameters are predicted and compared with experimental results.
机译:提出了一种数字模型,描述了用金属氧化物(MOX)EUV光致抗蚀剂系统中的图像形成的化学和物理机制。物理和化学性质的实验测量用于在光刻工艺中的每个步骤中发育MOX抗蚀剂膜的化学和物理状态的定量表示。辐射诱导的缩合以驱动发育速率的非线性变化的作用被阐明。预测光刻性能参数并与实验结果进行比较。

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