Solution-deposited A1_2O_3 dielectric towards fully-patterned thin film transistors on shape memory polymer

摘要

Solution deposition has potential for highly cost-effective fabrication of thin film transistors (TFTs) on flexible substrates. Shape memory polymer (SMP), with improved thermal mechanical response, may enable large-area flexible devices, as well as add control to the product shape and modulus. Until date, TFTs made on SMP substrates have been limited to vacuum-deposition methods. While TFTs processed through more economical solution-based techniques achieve device performance close to their vacuum-processed counterparts, they have not yet been demonstrated on SMP substrates due to the required high calcination temperatures (> 500 °C). To take full advantages of SMP, low temperature (< 200 °C) solution-based processing is highly desirable. Compatibility of the deposition process with the substrate and previously deposited films is essential. Here, we develop a process that incorporates direct UV patterning that would allow for fabrication of oxide TFTs on SMP using a reduced number of processing steps. Rigid In20_3 TFTs, deposited from solution-combustion synthesis, are fabricated on Si substrates with different solution-deposited dielectrics to evaluate their potential for transferring to SMP.