SiGe heterojunction bipolar transistor technology for sub-mm-wave electronics — state-of-the-art and future prospects

摘要

An overview on the most recent and the expected future development of SiGe heterojunction bipolar transistor (HBT) performance for (sub-)mm-wave applications is provided. Achieving cut-off frequencies beyond 500 GHz (for f_tand f_maxsimultaneously) has been made possible by recent European joint projects with a very low development cost compared to CMOS. Accurate device modeling proved to be a valuable guide for process development and a key enabler for minimizing circuit design and fabrication iterations as well as for creating a SiGe HBT technology roadmap. Fundamental differences between HBT and field-effect transistor (FET) high-frequency performance are discussed based on experimental and predicted data.