A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS

摘要

In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines in G band is presented and analyzed. The experimental results of the frequency doubler exhibit at 174 GHz a peak output power of +2 dBm associate with a linear conversion gain of ?3.8 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 25 mW. This doubler is fabricated in a 55 nm SiGe BiCMOS technology from STMicroelectronics with ft/fmax 320/370 GHz respectively and an area of 1200×700 μm2 including the pads.