Experimental verification of TCAD simulation for high-performance SiGe HBTs

摘要

The ability of state-of-the-art TCAD simulation to predict the performance of SiGe HBTs with advanced vertical doping profiles is evaluated by a comparison of simulation and experiment. Doping profiles of HBTs with fT > 400GHz were derived from a combination of various experimental techniques and used as input for two-dimensional device simulation with the hydrodynamic transport model. While the present simulations agree with measured DC characteristics, they underestimate measured peak fT values by 11 %.