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机译:TCAD和EM共仿真方法,以验证SiGe HBT测量高达500 GHz
Univ Bordeaux IMS Lab Talence France|IIT Madras Dept Elect Engn Chennai Tamil Nadu India;
Univ Bordeaux IMS Lab Talence France;
Univ Bordeaux IMS Lab Talence France;
IIT Madras Dept Elect Engn Chennai Tamil Nadu India;
Univ Bordeaux IMS Lab Talence France;
SiGe HBT; HF S-parameter measurement; On-wafer; TRL calibration; De-embedding; TCAD-EM co-simulation; Virtual measurement;
机译:120 GHz SiGe HBT中基于衬底电流的雪崩倍增测量
机译:SiGe HBT中Ge深度分布的精确测量-不同方法的比较
机译:用于Si / SiGe:C HBT在200 GHz时的负载牵引测量的原位集成调谐器方法
机译:欧洲DOTFIVE项目中在500GHz SiGe:C HBT上的TCAD仿真和开发
机译:SOI设备低功耗,高频横向SiGE HBT的优化TCAD模拟
机译:SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
机译:从条纹几何SiGE HBTs上测量中提取的热阻验证