The optoelectronic properties of a solar energy material: Ag2HgSnS4

摘要

We used an ab initio Ml potential-linearized augmented plane wave technique within the density functional theory to study the structural and optoelectronic properties of Ag2HgSnS4 in a wurtzite-stannite phase. The exchange correlation effects are included through the generalized gradient approximation and modified Becke-Johnson exchange potential. Various physical quantities, such as lattice parameter, bulk modulus, band structure and density of states, are given. Also, we have presented the results of the effective mass for the electrons in the CB and the holes in the BV. We show that the modified Becke-Johnson exchange potential can predict the energy band gap in better agreement with the experiment. In addition the dielectric function and energy-loss function are presented for the energy range of 0-26 eV. The electronic and optical properties indicate that this compound can be successfully used in optoelectronic devices