Kinetic Study of Low Temperature Oxidation of N-pentane with Nitric Oxide Addition in a Jet Stirred Reactor

摘要

The low temperature oxidation of n-pentane with nitric oxide (NO) addition from 400K to 800K has been investigated in an atmospheric jet stirred reactor (JSR). The concentration of NO is varied from 0 to 1070ppm in the mixture to study its sensitization effect on the n-pentane oxidation. n-pentane, O_2, CO, CO_2, CH_2O, CH_2O, C_2H_4, CH_3CHO, H_2O_2, NO, and NO_2 are in-situ quantified by using the molecular beam mass spectrometer (MBMS), micro-gas chromatography (μ-GC), and the transportable dual-modulation faraday rotation spectrometer (DM-FRS) simultaneously. The experimental results reveal that the presence of NO inhibits and promotes the oxidation of n-pentane at lower and higher temperatures, respectively, and has a significant effect on the oxidation initiation temperature and negative temperature coefficient (NTC) behavior of n-pentane. A new NO sensitized n-pentane mechanism, consists of a existing n-pentane base mechanism with an appropriate addition of our NO_x sub-mechanism, is developed and refined to predict the experimental results. The key features of NO sensitized n-pentane oxidation are captured in the model and the kinetic effect of NO sensitization is detailed analyzed with varied temperatures.