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Synthesis of copper doped Zinc oxide nanowires with enhanced ultraviolet photoresponse behavior

机译:具有增强的紫外光响应行为的铜掺杂氧化锌纳米线的合成

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This work mainly focused on the synthesis of copper doped zinc oxide nanowires by hydrothermal method, their characterization and their ultraviolet (UV) light sensing response at room temperature. The structural and morphological characterization was carried out using X-ray diffraction and scanning electron microscopy. Enhanced ultraviolet (UV) photodetection property has been achieved for a dopant concentration of 2.5wt% and 5wt% showing UV photosensitivity values (photo-to-dark current ratio) of around 800 and 1800, respectively. This is an order of magnitude higher than the undoped ZnO nanowires. High photocurrent gain is attributed to the trapping of carriers under dark and detrapping them under UV illumination by Cu-related defects. Enhancement in photosensitivity indicates that Cu-doped ZnO nanowires are promising candidates for UV photodetection applications.
机译:这项工作主要集中在室温下通过水热法,其表征及其紫外(UV)光传感响应来合成铜掺杂的氧化锌纳米线。使用X射线衍射和扫描电子显微镜进行结构和形态表征。增强的紫外线(UV)光电检测性已经实现了2.5wt%和5wt%的掺杂剂浓度,显示出约800和1800的UV光敏值(光到暗电流比)。这是比未掺杂的ZnO纳米线高的数量级。高光电流增益归因于暗载体的捕获,并通过Cu相关缺陷根据紫外线照明脱节它们。光敏性的增强表明Cu掺杂的ZnO纳米线是UV光电探测应用的承诺候选者。

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