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Study on Degradation of Propagation Delay Time and Low-Frequency Noise of High-Speed Optocoupler

机译:高速光耦合器扩展延迟时间和低频噪声的降解研究

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CTR (Current transfer ratio) is generally used to characterize the reliability parameters of optocoupler in engineering. However, high-speed optocoupler has a different structure from the common optocoupler, therefore its most important parameter should be propagation delay time. In addition, CTR serving as the macroscopic parameters, its changes can't directly reflect microscopic changes of the internal defects in device. It is discovered that the number of microscopic defects in the device and the level of low-frequency noise shows a positive correlation. In terms of high-speed optocoupler, this paper proposed a method of combining propagation delay time and low-frequency noise to evaluate the storage reliability. The paper demonstrated how to design circuit to test these parameters and obtain their variations trajectory in accelerated degradation test. In this paper, 20 VO2630 devices were divided into four groups, and a accelerated test at 100°C, 125°C, 150°C and 175°C was conducted to monitor propagation delay time and other parameters related with low-frequency noise. These parameters had different degrees of degradation. This paper showed the degradation process of propagation delay time. It was found that the initial value of propagation delay time was nearly identical, but parameters related with low-frequency noise had different initial values. The larger the initial value of low frequency noise is, the faster propagation delay time will degrade. The main cause of degradation of propagation delay time is Schottky clamped transistor degradation. Finally, this paper discussed the advantages and disadvantages about utilizing conventional electrical parameters or low frequency noise to evaluate the reliability.
机译:CTR(电流传递比率)通常用于表征工程中光耦合器的可靠性参数。然而,高速光耦合器具有来自公共光耦合器的不同结构,因此其最重要的参数应该是传播延迟时间。此外,CTR用作宏观参数,其变化不能直接反映设备内部缺陷的微观变化。发现装置中的微观缺陷数量和低频噪声水平显示出正相关。在高速光耦合器方面,本文提出了一种组合传播延迟时间和低频噪声来评估存储可靠性的方法。本文证明了如何设计电路以测试这些参数并在加速降解测试中获得其变化轨迹。在本文中,将20个VO2630器件分为四组,并进行加速试验,在100℃,125℃,150℃和175℃下进行,以监测传播延迟时间和与低频噪声相关的其他参数。这些参数具有不同程度的降解。本文展示了传播延迟时间的降解过程。发现传播延迟时间的初始值几乎相同,但与低频噪声相关的参数具有不同的初始值。低频噪声的初始值越大,传播延迟时间的速度越快会降低。传播延迟时间劣化的主要原因是肖特基钳位晶体管劣化。最后,本文讨论了利用传统电参数或低频噪声来评估可靠性的优点和缺点。

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