Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well

摘要

InGaN LEDs with different doped type and doping concentration of quantum well barriers are theoretically studied and compared by using the APSYS simulation program. Comparing with the undoped and the n-doped, the good efficiency profile is obtained when the quantum well barrier is p-doped. As the concentration of p-doped increases, the hole concentration in quantum well increases markedly. The optical performance; radiative recombination rate are improved and electron leakage is reduced.