Crystal Orientation and Electrical Properties of Tin Oxide Transparent Conducting Films Deposited on Rutile Surface

摘要

Thin films of tin oxide (SnO2) without doping are attractive transparent conducting film since environmentally unfavorable elements of antimony or fluorine are eliminated. Tin oxide films without doping were fabricated very cheaply on (001) and (100) planes of single crystal of rutile (TiO2) by spray chemical vapor deposition (mist CVD). The film deposited on rutile (001) surface was poorly epitaxial (double domain) but with higher mobility (24 cm~2 V~(-1) s~(-1)) and lower resistivity (1.6xl0~3 Ω cm) than that deposited on glass substrate (16 cm~2 V~(-1) s~(-1) and 2.4x10~(-3) Ω. cm) for reference. Deposition on rutile (100) surface resulted in better epitaxial growth (single domain). The mobility (39 cm~2 V~(-1) s~(-1)) and the carrier electron density (2.7x10~(20) cm~(-3)) were much higher. The resistivity (6.2x 10~(-4) Ω cm) was compatible with those doped with antimony or fluorine and will be the lowest among tin oxide films without doping.