Simple and easy one step method for synthesizing ZnO nanorods for high frequency device application

摘要

ZnO nanorods were prepared by simple and easy one step thermal decomposition method calcined at two different temperatures 400°C and 600°C for three hours. Prepared ZnO nanorods were characterized with various characterization techniques. Structural analysis was performed by X-ray diffraction (XRD) and found single phase formation with wurtzite hexagonal structure. Surface morphology was visualized by field emission scanning electron microscope (FESEM). FESEM images clearly showed formation of ZnO nanorods for both samples. The dielectric results showed that sample sintered at 600°C is more suitable for high frequency memory device application due to its high value of dielectric constant 60 and small dielectric loss 0.9 at 1 KHz.