High-Performance Photodetectors using Transition Metal Dichalcogenide (TMD)- based Hybrid Structures

摘要

We demonstrate the high-performance TMD (WSe_2 and ReSe_2) photodetectors with a high responsivity (1.3×10~6 A/W for WSe_2 and 1.2×10~6 A/W for ReSe_2) and fast temporal photoresponse (rising/decaying time: 2.8/20.8 ms for WSe_2 and 58/263 ms for ReSe_2). These were achieved by (i) applying PPh_3 n-doping technique and (ii) inserting passivating layers (h-BN or APTES layers). Through the PPh_3-based n-doping process, we significantly increased the photoresponsivity of the both WSe_2 and ReSe_2 photodetectors (2.7×10~3 → 4.3×10~5 A/W for WSe_2 and 4.0×10~3 → 3.7×10~4 A/W for ReSe_2). In particular, by inserting a h-BN layer at the WSe_2/SiO_2 interface and an APTES layer at the ReSe_2/SiO_2 interface, respectively, we further enhanced fast temporal photoresponse (rising/decaying time: 97/827 → 2.8/20.8 ms for WSe_2) and high responsivity (3.7×10~4 → 1.2×10~6 A/W for ReSe_2).