The Study of Atmospheric Pressure CVD Growth Process of MoxW1-xTe2 Nanobelts for Tuneable Chemical Composition

摘要

Transition metal dichalcogenides nanomaterials with topological semimetallic phase (MoTe2, WTe2 and MoxW1-xTe2) are expected to realize no-consumption electronic transportation due to its Dirac point. Especially, the various structure existence in MoxW1-xTe2, like hexagonal (2H), monoclinic (IT') and othorombic (Td), provides opportunities for phase engineering, which is beneficial for future novel electronic and spintronic devices. Plenty works have focused on the synthesis of MoTe2, WTe2 and MoxW1-xTe2 nanomaterials. Unfortunately, the understanding of the growth process of MoxW1-xTe2 nanomaterials is still absent and the exact control of the atomic ratio between Mo and W in MoxW1-xTe2 nanomaterials is still a huge task up to now. Here, we study the growth process of MoxW1-xTe2 nanomaterials by the growing of binary MoTe2 and WTe2 nanomaterials. Through detailed structural and compositional characterization, same growth mode, crystallography, and morphology have been observed among MoTe2, WTe2 and MoxW1-xTe2 nanomaterials. Through analysis, we suggest that the heating temperature of Mo and W precursors during the CVD process is the key parameters to achieve the tuneable chemical composition of MoxW1-xTe2 nanomaterials. This study dissected the growth process of MoxW1-xTe2 nanomaterials and provided a possible method to control the chemical composition of MoxW1-xTe2 nanomaterials by APCVD, which is beneficial to realize the phase engineering in Mo-W-Te system and also for future topological application.