Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

摘要

A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced positive charges based on energy profiling approach. The time exponent of 0.1 is observed in sub-threshold operation modelled based on the Two-Stage NBTI model while time exponent of 0.3 is observed in sub-threshold operation modelled based energy profiling approach. Considerable threshold voltage shifts are observed during sub-threshold operation based on both defect mechanisms. Extraction of E'centres and EVPb H Complex as well as positive charges was found to be temperature dependence hence the degradation is also thermally activated during subthreshold operation for both defect mechanisms.