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Study of NASICON Structured Lithium Ion Conductor Li_(1+x)Al_xZr_(2-x)(PO_4)_3

机译:Nasicon结构锂离子导体Li_(1 + x)AL_XZR_(2-x)(PO_4)_3

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摘要

NASICON structured Li_(1+x)Al_xZr_(2-x)(PO_4)_3 have been studied to replace LAGP and LATP in this paper. The effects of both annealing temperature and Al doping were investigated. Both the annealing temperature and Al doping exhibited an optimal value, which is 1100°C and 0.3, respectively. The doping of Al helped LiZr_2(PO_4)_3 transfer from triclinic phase to rhombohedral phase and the conductivity of doped one was improved by one order of magnitude.
机译:已经研究了NASICON结构LI_(1 + x)AL_XZR_(2-X)(PO_4)_3以取代本文取代LAGP和LATP。研究了退火温度和Al掺杂的影响。退火温度和Al掺杂均显示出最佳值,分别为1100°C和0.3。 Al帮助的Lizr_2(PO_4)_3从三级相到菱形相的掺杂和掺杂物的电导率通​​过一种级别提高。

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