3D Simulation of the Closed Shell-Electrode Detector

摘要

A new structure of 3D detectors has been proposed. In order to separate it from the non-etch-through 3D-Trench electrode detectors, we call it as the Closed Shell-Electrode Detector (CSED, Chinese Patent #ZL201620361767.1). The detector concept of the CSED will be described in detail here. Full 3D simulations of the performance behavior of the CSED will be carried out and presented. These simulations include detector potential, electric field, and electron (or hole) concentration profiles, as well as detector leakage current, capacitance, and charge collection properties. Comprehensive comparisons between the CSED and the non-etch-through 3D-Trench electrode detectors will be made. The novel CSED has much better electric field profiles near the backside and are much better isolated from neighboring cells than that in non-etch-through 3D-Trench electrode detectors.