CuIn_(1-x)Ga_xSe_2 films of different composition (0< x <1), were pulse electrodeposited on indium tin oxide coated glass and molybdenum substrates at 50% duty cycle and at room temperature. The films exhibited single phase chalcopyrite structure. The band gap of the films increased from 1.11 eV to 1.62 eV as the gallium concentration increased. The magnitude of the room temperature resistivity increased from 0.8 ohm cm to 23.52 ohm cm as the gallium concentration is increased. Films of composition CuIn_(0.7)Ga_(0.3)Se_2 exhibit maximum V_(oc). The power output characteristics after 80 s photoetching indicates a V_(oc) of 0.70V, J_(sc) of 20.0 mA cm~(-2), fill factor of 0.71 and efficiency η of 14.33%, for 60 mW cm~(-2) illumination.
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