Hydrogen Atom Desorption Induced By Electron Bombardment on Si Surface

摘要

In this research, we aim at developing STM lithography with atomic resolution toward its application to quantum devices. First, we have confirmed successfully an atomically flat and hydrogen-terminated surface of Si (111) required for the lithography after unisotropic chemical etching in aqueous NH_4F solution with decreased dissolved oxygen. Next, we have studied hydrogen desorption from the surface by electron bombardment from an STM tip. It has been confirmed that desorption area increases approximately in proportion to the tunneling current.