In this work, we have reported the tunable band gap of single-layer graphene (SLG) on hexagonal boron nitride (h-BN) monolayer arranged in B3 super-lattice form, as a function of an external electric field perpendicular to the super-lattice plane and an applied external bidirectional stress from the first principle Density Functional Theory. To reduce the effect of substrate related performance degradation and open a band gap, graphene placed on h-BN has been reported in literature. To tailor the band gap, perpendicular electric field and biaxial stress were applied in this work. It was observed that band gap increases from compressive to tensile biaxial strain when no electric field was applied. With the application of 5×10~9 V/m external electric field a band gap of 144.5 meV was found which is promising for logic FET with a trade off in degradation in Fermi velocity and higher electron effective mass.
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机译：在这项工作中，我们报道了以B3超格形式布置的六边形氮化硼（H-BN）单层上的单层石墨烯（SLG）的可调谐带隙，作为垂直于超级电场的外部电场的函数晶格平面和来自第一原理密度泛函理论的应用外部双向应力。为了降低基板相关性能降解和开放带隙的影响，在文献中报道了在H-BN上的石墨烯。为了定制带隙，在这项工作中应用垂直电场和双轴应力。观察到，当没有施加电场时，带隙从压缩到拉伸双轴应变增加。施加5×10〜9 V / M外部电场的频带差距为144.5 mev，对于逻辑FET有前途，具有在费米速度和更高的电子有效质量的劣化中的逆转。
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