Damage Correlations in Semiconductor Devices Exposed to Gamma and High Energy Swift Heavy Ions

摘要

NPN rf power transistors and N-channel depletion MOSFETs are irradiated by different high energy swift heavy ions and ~(60)Co gamma radiation in the dose range of 100 krad to 100 Mrad. The damage created by different heavy ions and ~(60)Co gamma radiation in NPN rf power transistors and N-channel depletion MOSFETs have been correlated and studied in the same dose range. The recoveries in the electrical characteristics of different swift heavy ions and ~(60)Co gamma irradiated devices have been studied after annihilation.