Development and Integration of systems with enhanced resolutions based on Si-containing block copolymers for line space applications

摘要

While directed self-assembly based on poly(styrene)-block-poly(methylmethacrylate) block copolymers (BCP) for contact shrink or multiplication applications approaches industrial maturity, new systems with the ability to self-assemble with sub-20 nm features need to be evaluated taking into account the integration requirements (in terms of solvent, thermal budget, etching capability,...). In this contribution, two different systems Si-containing BCP systems will be presented targeting line/space applications. These two systems are characterized by a high segregation strength allowing the design of block copolymers with sub-20 nm period while high etching contrast inherent to the Si-containing block could be achieved between the different blocks. Firstly original poly(dimethylsilacyclobutane)-block-poly(methylmethacrylate) (PDMSB-b-PMMA) block copolymers showing hexagonal arrays of PDMBS cylinders have been developed. Study of the PDMSB-b-PMMA self-assembly both on free surface and on patterned substrates show its high potential since long range order arrays can be obtained by a rapid thermal annealing treatment. Besides preliminary results on their track integration is discussed with a demonstration of density multiplication up to 18. The second system consists of poly(dimethylsiloxane)-block-poly(lactid acid) block chains which self-assemble into PDMS cylinders in thin film configuration. Such block copolymer system provides an easy access to line/space arrays of parallel PDMS cylinders which can be subsequently transferred into the desired stack layers through plasma etching.