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High Temperature Dielectric Properties of Polyimide/Boron Nitride Nanocomposites : Nanoparticle Size and Filler Content Effects

机译:聚酰亚胺/氮化硼纳米复合材料的高温介电性能:纳米粒子尺寸和填料含量效应

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摘要

An interesting way to improve high temperature polyimides (PI) electrical properties by filling it with boron nitride nanoparticles (BN) is proposed in this study. The filler content (from 0 to 60 vol.%) and the average diameter size (35 nm and 120 nm) of these nanoparticles have been varied. The preparation of the patented PI/BN nanocomposite films was performed following an optimized process in order to obtain a good dispersion of the nanoparticles in the films. The nanocomposite films were electrically characterized in the range 200-350 °C. In the case where the nanoparticles had the smallest size, the DC conductivity and leakage currents decreased from 4 to 6 orders of magnitude when the PI/BN films were compared to the neat PI films. The improvement of this property was obtained by a small amount of nanoparticles (1.6 vol.%). Results also show an increase in the dielectric strength of 1 MV/cm for a filler content of 42 vol.%. In the case where the nanoparticles had a larger size, a small improvement was seen on the DC conductivity and leakage currents. In contrast, the breakdown field was lower than the one of the neat PI, due to aggregate formation within the films.
机译:本研究提出了通过用氮化硼纳米颗粒(BN)填充通过将其填充氮化硼纳米颗粒(BN)来改善高温聚酰亚胺(PI)电性能的有趣方法。已经改变了这些纳米颗粒的填料含量(从0至60体积%)和平均直径尺寸(35nm和120nm)。在优化的方法之后进行专利的PI / BN纳米复合膜的制备,以便在薄膜中获得良好的分散纳米颗粒。纳米复合薄膜的特征在200-350℃的范围内。在纳米颗粒的尺寸最小的情况下,当与整齐PI膜进行比较时,直流电导率和泄漏电流从4到6个级别下降。通过少量纳米颗粒(1.6体积%)获得该性质的改善。结果还显示填料含量为1mV / cm的介电强度的增加,用于42体积%。%。在纳米颗粒的尺寸较大的情况下,在DC电导率和漏电流上观察到小的改进。相反,由于薄膜内的聚集体形成,击穿场低于整齐PI之一。

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