Synthesis of Epoxidised Silsesquioxane Polymer as Negative Photoresist in Photolithography Application

摘要

Epoxidised silsesquioxane (EPSQ) polymer was prepared by hydrosilylation process involving epoxy-disiloxane (EDS) and vinyl silsesquioxane (VSQ). They were characterised and analysed using Fourier Transformed Infrared (FTIR) and H- and Si-Nuclear Magnetic Resonance (NMR) spectroscopy. Pattern development was successfully performed affording well defined features of micron scale using suitable solvent developer. It was demonstrated that the feature definition was highly dependent on time of solvent dissolution and stirring rate. Optimization of several parameters such as resist thickness, pre-bake and post-bake time, ultra-violet (UV) intensity and exposure time are still required for the improved performance photo-resist material. However the results proved that the EPS can be potentially used as photoresist in photolithography application.