Modeling of tandem solar cell InP / Ge using AMPS-ID

摘要

The primary objective of this modeling investigation is to optimize a multijunction tandem device under the AM1.5G spectrum. Based on previous studies, InP and Ge cells, because of their energy band gaps, can be combined together to achieve high-efficiency double-junction devices. In this study, the top cell is made of InP (1.35 eV) while the bottom cell is made of Ge (0.66 eV). In order to avoid the losses and design constraints observed in two-terminal and four-terminal devices. In order to determine the optimal structure of the device, the top and bottom junctions were investigated and optimized with regard to the thicknesses . The optimum configuration of the device shows an efficiency of 26.79% under the AM1.5G spectrum and one sun, which is higher than the efficiency of an optimized single-junction Si cell under the same illumination conditions.