High Precision Laser Induced Etching of Multilayered MoS_2

摘要

We demonstrate a method for reducing the thickness of multilayered MoS_2 to few and single layers by irradiation with a 532 nm wavelength laser spot. The morphology and optical properites of the etched MoS_2 were were measured by atomic force microscopy (AFM) and Raman spectroscopy before and after laser etching. Our laser etching method is a simple and highly effective tool for the fabrication of single, and few layered MoS_2 for atomic scale optical and electronic device applications..