Investigation the Flow Charge Rate at InAs/D149 and ZnO/D149 System Using Theoretical Quantum Model

摘要

In this ongoing study, we investigated a theoretical study of flow charge transfer at semiconductor-liquid interfaces. The quantum method has employed in obtaining the flow rate of InAs and ZnO semiconductors with D149 interface. The both system have maximum flow charge rate with DichIoroethane solvent, the ZnO/D149 has large flow charge rate compare to InAs/D149 system for the same overlapping coupling. Flow charge rate was decreasing with increasing the potential barrier and vice versa for both system and the flow rate increasing eith decreasing the orientation transition energy