Spatial atomic layer deposition for large-area and flexible electronics 3.02

摘要

The last few years have seen major progress in the development of Spatial Atomic Layer Deposition (ALD). The main advantages of spatial ALD are the high deposition rates that can be achieved (nm/s as compared to ~nm/min for conventional'ALD); the possibility to conduct atmospheric pressure deposition, and the absence of parasitic deposition in the reaction chamber. The first industrial application exploited today for spatial ALD is surface passivation of crystalline silicon solar cells, and new applications, such as encapsulation, diffusion barriers and roll-to-roll processing, are emerging. We present two examples of typical large-are, high-volume applications for which we are developing Spatial ALD technology at Hoist Centre: roll-to-roll Spatial ALD for making barrier foils and sheet-to-sheet Spatial ALD of amorphous oxide semiconductors for TFT displays.