Generation of Regular Pore System in Silicon by Means of Nanoindentation

摘要

Regular pore system (RPS) was generated in monocrystalline silicon by means of electrochemical anodization of the surface after forming "matrices" of indenter imprints. The morphology of the obtained RPSs was examined using scanning electron microscopy. It was shown that decrease in the distance between the indentations (indentation depth h = 140 nm) allows to obtain RPSs with crosswise pore sizes d < 300 nm, which is unattainable by photolithography technique. The data indicate that nanoimprint method can be employed to create regular systems of micro- and nanopores in silicon.