An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO2 and SiO2 Interfaces

摘要

An analytical model of electron transmittance and tunneling current in an anisotropic n~+poly-Si/HfO2/SiO2/Si (100) metal-oxide-semiconductor capacitor by including a trap between HfO2 and SiO2 interfaces has been derived. It considers the coupling of electron transverse and longitudinal motions and uses an Airy-wavefunction approach. It has been shown that the tunneling current density increases as the trap becomes deeper or wider because many resonant states available in the quantum well.