Modeling of Cu_2ZnSnS_4 Solar Cells with Bismuth Sulphide as a Potential Buffer Layer

摘要

The Cu_2ZnSnS_4 is a quaternary semiconductor compound has recently been drawn the attention of extensive research as a potential absorber layer since its offers favourable optical and electronic properties along with low cost material. In this research work, the deep level defects on the performance of CZTS solar cells with Bismuth Sulphide (Bi_2S_3) buffer layer was carried out by numerical analysis using SCAPS 2802 simulator. In the proposed cell, the CZTS absorber layer was reduced that minimized the cost, saving process time and energy required for fabrication. In this study, it was found that the feasibility of this proposed ultra thin CZTS solar cells and showed higher efficiency of 17.89% (J_(SC) = 31.05 mA/cm~2, V_(OC) = 1.03V and FF = 0.562). Moreover, the thermal stability of the CZTS solar cell was examined and found that the normalized efficiency of the proposed cell was linearly decreased with the increased of operating temperature at the gradient of -0.41%/°C.