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Inductively coupled plasma modified silica material Technology research

机译:电感耦合等离子体改性二氧化硅材料技术研究

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The using inductively coupled plasma etching techniques, the surface of fused silica was etched by CF4 as etching reaction gases. The results show that the fused silica surface scratches buried defects can be effectively removed with no replication effect, with the etching process proceeds, fused silica at 355nm laser light R: 1 under irradiated, the initial damage threshold of component surface is worth to an effective improved, damage resistance level of element surface more balanced, low damage threshold is worth to significantly improve.
机译:使用电感耦合等离子体蚀刻技术,通过CF4蚀刻熔融二氧化硅的表面作为蚀刻反应气体。结果表明,熔融二氧化硅表面划痕可以有效地除去掩埋缺陷,没有复制效果,随着蚀刻工艺进行,熔融二氧化硅在355nm激光R:1的辐照下,元件表面的初始损伤阈值值得有效改善,元素表面的损伤水平更平衡,低损伤阈值值得显着改善。

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