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Ultra-Vioiet Photoresponse Characteristics of Nanostructured Al Doped Zinc Oxide Thin Films Based Ultra-Violet Sensor

机译:基于超紫色传感器的纳米结构Al掺杂氧化锌薄膜的超vioiet光响应特性

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Nanostructured Aluminum (Al) doped Zinc Oxide (ZnO) thin films based ultra-violet (UV) sensors were prepared on glass substrates using immersion technique at different immersion times. Surface morphology results as characterized by scanning electron microscope (SEM) show that all prepared nanostructured Al doped ZnO were in form of nanorod structures with the typical diameter in the range of 60-250nm and the length within several micrometers. Photocurrent measurement results of the fabricated UV photoconductive sensor from nanostructured Al doped ZnO thin film immersed at 1 hr gives the highest photocurrent intensity compared with other samples.
机译:在不同浸入时间的浸入技术在玻璃基板上制备纳米结构铝(Al)掺杂的氧化锌(ZnO)薄膜的超紫(UV)传感器。如扫描电子显微镜(SEM)所表征的表面形态结果表明,所有制备的纳米结构Al掺杂的ZnO都是纳米棒结构的形式,典型直径在60-250nm的范围内,并且在几微米内的长度。与其他样品相比,浸没在1小时的纳米结构的Al掺杂ZnO薄膜的制造的UV光电导传感器的光电流测量结果给出了最高的光电流强度。

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