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Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

机译:基材温度对RF磁控溅射制备的氧化铟锡纳米μ的形态学和电性能的影响

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Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10~(-5) Ωcm is obtained from ITO nanocolumns deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumns deposited at substrate temperature of 200°C.
机译:在不同的基板温度下使用RF磁控溅射制备氧化铟锡。研究了形态学和电学性质。通过原子力显微镜观察形态学性质。使用标准的两点探针测量测量电性能。结果表明,在高衬底温度下,平均粗糙度和峰对谷值最高。流域分析表明,总晶界在200℃的基板温度下最高。从沉积在200℃的底物温度的ITO纳米柱中获得9.57×10〜(-5)Ωcm的最低电阻率值。从沉积在200℃的底物温度的ITO纳米柱中观察到作为透明导电氧化物的形态学和电性能的改善。

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