Effect of TiO_2 Seed Layer Thickness to the Growth of TiO_2 Nanostructures by Immersion Method for Memristive Device Application

摘要

TiO_2 nanostructures were successfully grown on TiO_2 thin film by solution-based method at low temperature. TiO_2 thin film as a seed layer for the nanostructures growth was deposited on ITO substrate by RF magnetron sputtering method at 40 and 0 nm thicknesses. Then the TiO_2 nanostructures were synthesized on the samples by keeping them floating with TiO_2 layer facing down the vessel in 10M NaOH solution at 80°C for 45 min. Effect of seed layer thickness to the growth of TiO_2 nanostructure and its memristive behaviour were investigated. Surface morphology and current-voltage measurement for its memristive behaviour were measured by FESEM image and Keithley 4200 semiconductor characterization system. It was found that 0 nm-TiO_2 thin film result in the formation of dandelion-like morphology of TiO_2 nanowires and gives better memristive behavior with larger switching loops when positive voltage was applied to the sample.