Dark Current Mechanisms in Amorphous Selenium Avalanche Radiation Detectors

摘要

A theoretical model for describing bias-dependent dark current in amorphous selenium (a-Se) avalanche detector structures has been developed. The analytical model considers bulk thermal generation current from mid-gap states and carrier injection from the electrodes incorporating avalanche multiplication. An analytical expression for the multiplication factors for various current components at the avalanche fields is derived. The nature and relative importance of the injection and thermal generation currents are examined in this paper.