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Industrial bifacial silicon solar cells with up-converter and PbS quantum dots

机译:具有上变频器和PBS量子点的工业双流硅太阳能电池

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Up-converters use radiation normally transmitted by the solar cell and converts it to radiation, which can be converted to electric energy. Therefore, an up-converter should be placed on the rear side of a bifacial cell. This has the advantage that no impairment of the radiation impinging on the solar cell takes place. The number of photons that may be converted is limited by the absorption range of the up-converter and the efficiency of the up-conversion. High transmittance is required in the absorption range of the up-converter and the use of photoluminescence materials enhances the up-conversion phenomena. The photoluminescence material should absorb over a wide spectral range and emit in the absorption range of the upconverter. This paper presents the evaluation of the optical properties of the up-converter combined with PbS quantum dots and the reduction of the reflection losses in industrial bifacial silicon solar cells with up-converter/quantum dots incorporated. The up-converter materials are in the powder form, and the PbS quantum dots are available in the liquid form, so that an agent is needed, which at the same time should give a good optical coupling to the solar cell. Silicone gel with upconverter and quantum dots was laminated to the rear face of the bifacial cell by using an industrial technique based on frontsheet/EVA/backsheet. Combining the effects of up-converter and quantum dots, the reflection losses were reduced by 20%, demonstrating that the absorption and emission characteristics of the up-converter and quantum dots embedded in silicon can be tuned to the desired spectral region.
机译:上变频器使用太阳能电池通常传输的辐射,并将其转换为辐射,这可以转换为电能。因此,将隆起应放置在双接种细胞的后侧。这具有以下优点是,不会发生撞击太阳能电池的辐射的损伤。可以转换的光子的数量受到上变频器的吸收范围和上转换效率的限制。在上变转换器的吸收范围内需要高透射率,并且使用光致发光材料增强了上变化现象。光致发光材料应在宽的光谱范围内吸收,并在上变频器的吸收范围内发射。本文介绍了与PBS量子点联合的上转换器的光学性质的评价,以及工业双因子硅太阳能电池中的反射损耗,具有加上的转换器/量子点。上转换器材料处于粉末形式,并且PBS量子点以液体形式可用,从而需要试剂,同时应给太阳能电池提供良好的光学耦合。通过使用基于前线/ EVA /底片的工业技术层压具有上变频器和量子点的硅胶凝胶和量子点的后表面。结合上变频器和量子点的影响,反射损耗降低了20%,证明了嵌入在硅中的上变频器和量子点的吸收和排放特性可以调整到所需的光谱区域。

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