首页> 外文会议>Electrochemical Society meeting >Power Semiconductor Device Modeling and Simulation
【24h】

Power Semiconductor Device Modeling and Simulation

机译:功率半导体器件建模和仿真

获取原文

摘要

Power semiconductor devices continue to be an active area of research and development. With the emergence of wide bandgap technologies this area has blossomed over the past decade beyond silicon boundaries. A brief survey of courses available around the world on the topic of power semiconductor device modeling and simulation is provided. An exemplar course at the University of Arkansas is described to demonstrate its applicability to power electronics students interested in circuit design, controls, device design, electronic packaging, and compact modeling of devices. This course is built on model-based engineering principles that are applicable to any area of electronic design.
机译:功率半导体器件仍然是研究和开发的有效区域。随着宽带隙技术的出现,这一领域在过去十年之外蓬勃发展,超越硅边界。提供了对世界各地的课程进行了简要调查,以电力半导体器件建模和仿真主题。描述了阿肯色大学的一个示例课程,以展示其对电源电子学生的适用性,对电路设计,控制,设备设计,电子包装和设备紧凑型建模感兴趣。本课程建立在基于模型的工程原则上,适用于任何电子设计领域。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号