Wide Band Gap (WBG) semiconductors, Silicon Carbide (SiC) and Gallium Nitride (GaN), have enormous potential for transformative impact on electric utility and transportation infrastructures. However, commercialization of WBG power electronics switching devices has been slow primarily due to high cost and unproven field-reliability. This paper reviews the manufacturing challenges facing the WBG power electronics industry in order to "unlock" the true potential of this "game changing" solid-state energy conversion technology.
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