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Photopatterning Based on a Chemically Amplified Mechanism Nano-sheet Films

机译:基于化学放大机理纳米片薄膜的PhotoPatter

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In the paper, an approach for introducing a photoacid generator (PAG) into Langmuir-Blodgett (LB) films to draw photopatterns is described. The chemically amplified positive-tone resist system used here consisted of two components: a copolymer, poly(iso-pentylmethacrylamide-co-4-t-butyloxylvinylphenylcarbonate) [poly(iPMA-t-BVPC39)] and a photoacid generator (PAG), tri(2,3-dibrompropyl)iso-cyanvrate (TDBPIC). In the two-component system, the acid generated by the photoacid generator (PAG) catalyzes the deprotection reaction of poly(iPMA-t-BVPC39) to remove the tert-butoxycarbonyl group (t-BOC) in the exposed region during the post exposure baking process, thus rendering the exposure region soluble to alkali aqueous to form a positive tone. Photolithographic properties of the LB films have been evaluated. The patterns can be resolved with a resolution of 1 μm line width by UV irradiation, followed by development with an alkali solution. Quantum yield is determined to be 0.065 and catalytic chain length is also calculated to be 2460. The LB films used above can be used to generate etched gold patterns on a glass substrate using an aqueous iodide, ammonium iodide in alcohol/water, as the etchant. The etch resistance of such LB films is sufficiently good, allowing patterning of a gold film suitable for photomask fabrication.
机译:在本文中,描述了一种方法,用于将光酸发生器(PAG)引入Langmuir-Blodgett(LB)膜以绘制光图。这里使用的化学放大的正色调抗蚀剂系统由两种组分组成:共聚物,聚(异戊基甲基丙烯酰胺-CO-4-叔丁基氧基苯基碳酸盐)[聚(IPMA-T-BVPC39)]和光酸发生器(PAG),三(2,3-二溴丙基)异氰化(TDBPIC)。在双组分系统中,光酸生成器(PAG)产生的酸催化聚(IPMA-T-BVPC39)的脱保护反应,以在曝光后曝光期间除去暴露区域中的叔丁氧基羰基(T-BOC)烘焙过程,使暴露区域可溶于碱金属水溶液以形成阳性调。已经评估了LB膜的光刻性能。通过UV照射,可以通过分辨率来解决图案,通过UV辐射,然后用碱溶液进行显影。量子产率为0.065,也计算为2460.催化链长度为2460.可用于使用碘化碘化物,醇/水中的含水碘化物,作为蚀刻剂在玻璃基板上产生蚀刻金图案。 。这种LB膜的耐蚀刻性足够好,允许图案化适于光掩模制​​造的金膜。

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