RF-MEMS are an enabling technology for high performance tunable and reconfigurable communications and radar applications. In this paper, we describe the successful integration of RF-MEMS with a 0.18 μm, high voltage RF-CMOS process that is fabricated on 200 mm wafers. The RF-MEMS device is hermetically encapsulated at the wafer level at the conclusion of the process. The RF-MEMS device is a switchable capacitor arrayed to form tunable capacitor arrays that can be used in various applications such as tunable matching networks, tunable filters, tunable power amplifiers, or tunable front ends more generally. The CMOS-integrated, hermetic encapsulated RF-MEMS can be moved through any final back end of line (BEOL) packaging and assembly process to deliver flip-chip or wafer level chip scale packaged devices. The commercial CMOS-integrated RF-MEMS process and product qualification are imminent at the preparation of this paper
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