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Production of Multiply-Charged Metal-Cluster Anions in Penning and Radio-Frequency Traps

机译:泛射和射频陷阱中的乘以充电金属聚类阴离子的生产

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The number of electrons in an atomic cluster can have a severe influence on its properties, and thus the charge state is a crucial parameter. In the present study, poly-anionic clusters are produced by electron-attachment to cluster mono-anions stored in ion storage devices. The polyanion production is investigated for two different trap types. In a Penning trap (ion-cyclotronresonance, or short ICR trap) charged particles with any mass-to-charge ratio up to a critical value can be stored at the same time. Thus, cluster anions are stored together with electrons, simultaneously, allowing for electron attachment from an electron bath. However, the highest polyanionic charge state that can be produced is limited by two conditions. On the one hand, it is restricted by the upper mass limit of the trap, because a minimum cluster size is required to gain a certain (negative) charge state. On the other hand, it is limited by the Coulomb potential of the cluster anions, because the maximum energy of the attaching electrons in the bath is given by the depth of the trapping potential. In contrast to the Penning trap, the radio-frequency (RF) traps confine particles with only a narrow range of the mass-over-charge ratio values. In particular, there is a lower limit, preventing a simultaneous storage of electrons and clusters. At the same time, the RF trap's mass range can be shifted to large clusters, which are required to reach higher negative charge states. Application of rectangularly shaped RF-voltages, in contrast to sinusoidal ones, facilitates ion storage with respect to variation of the mass range, i.e. cluster size range, to be trapped. While poly-anion production in Penning traps is a well-established technique that has already been applied to several types of clusters, its realization in RF traps is currently being developed. Both schemes are described, including previous and recent experimental results.
机译:原子簇中的电子数量可能对其性质产生严重影响,因此电荷状态是关键参数。在本研究中,通过电子连接到存储在离子存储装置中的簇单阴离子的聚阴离子簇。对两种不同的陷阱类型研究了聚沉变产量。在捕获陷阱(离子 - 循环resonance或短ICR捕集)中,可以同时储存具有任何质量负荷比的带电粒子,可以同时储存临界值。因此,簇阴离子同时存储在电子,允许从电子浴中的电子连接。然而,可以生产的最高的多阴离子电荷状态受到两个条件的限制。一方面,它受到陷阱的上部质量限制,因为需要最小的簇大小来获得某个(负)电荷状态。另一方面,它受到簇阴离子的库仑电位的限制,因为浴中的附接电子的最大能量由捕获电位的深度给出。与捏阱相比,射频(RF)陷阱仅限于窄范围的质量电荷比值。特别地,存在下限,防止同时储存电子和簇。同时,射频陷阱的质量范围可以转移到大型簇,这需要达到更高的负电荷状态。与正弦形状相比,矩形RF电压的应用有助于离子存储相对于质量范围的变化,即簇尺寸范围,被捕获。虽然对捕获陷阱的多阴离子生产是已经应用于若干类型的群集的良好技术,但目前正在开发其在RF陷阱中的实现。描述了两种方案,包括先前和最近的实验结果。

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