On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

摘要

We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 μm and controlled n-type doping of 4 x 10~(14) cm~(-3).The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 μs using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.