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GRAIN BOUNDARY RESISTIVITY IN YTTRIA-STABILIZED ZIRCONIA

机译:氧化钇稳定的氧化锆中的晶界电阻率

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摘要

Three topics pertaining to the effect of grain size d on the grain boundary resistivity ρ_b in yttria-stabilized zirconia are considered: (a) the pertinent literature, (b) our recent isothermal annealing experiments and (c) development of a new model based on the effect of an electric field on grain growth. The grain size dependence of the bulk resistivity determined from the annealing tests was in reasonable accord with those in the literature from impedance spectroscopy. Two regimes occurred in the grain size dependence of the bulk resistivity, one for d > ~0.4μm, the other for smaller grain sizes. Employing the brick layer model, the grain boundary resistivity in the latter regime was approximately an order of magnitude larger than that within the grain interior. Our new model gave values for the space charge potential and grain boundary energy in accord with expectations and measurements. It is concluded that the space charge is the major factor responsible for the grain boundary resistivity.
机译:关于谷粒尺寸D对谷物稳定氧化锆晶界电阻率ρ_B有关的三个主题被认为是:(a)相关文献,(b)我们最近的等温退火实验和(c)基于的新模型的发展电场对晶粒生长的影响。从退火测试中确定的散装电阻率的晶粒尺寸依赖性与来自阻抗光谱的文献中的那些合理符合。两种制度发生在散粒电阻率的晶粒尺寸依赖性中,一个用于D>〜0.4μm,另一个用于较小的晶粒尺寸。采用砖层模型,后一个方案中的晶界电阻率大约大约大于谷物内部内的数量级。我们的新模型符合期望和测量的空间充电潜力和晶界能量的值。结论是,空间电荷是对晶界电阻率负责的主要因素。

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