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Optical properties and defect study of Ca~(2+) co-doping Lu_2Si_2O_7: Ce~(3+) single crystal scintillator

机译:CA〜(2+)共掺杂LU_2SI_2O_7:CE〜(3+)单晶闪烁体的光学性质及缺陷研究

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Single crystal of Lu_2Si_2O_7 (LPS): 0.5%Ce, 0.1%Ca was grown by the Czochralski method. The X-ray excited luminescence (XEL), photoluminescence excitation (PLE), photoluminescence (PL) and transmittance spectra were measured and discussed. The as grown LPS: Ce, Ca sample presents excellent optical quality with 81% transmittance. Two absorption peaks locate at 300 and 350 nm, corresponding to the electron transition of Ce~(3+) from 4f ground to 5d_1 and 5d_2 respectively. According to the Gaussian fitting, the XEL curve of LPS: Ce, Ca can be fitted into two peaks centering at 378 and 407 nm respectively. It is found that the addition of Ca~(2+) in LPS: Ce introduces more oxygen vacancies, leading to the decreases of the luminescence efficiency of LPS: Ce. Through the thermally stimulated luminescence (TSL) measurement, two kinds of charge trap are found in LPS: Ce, Ca, whose energy depths are 1.20 and 1.47 eV. The trap at 1.20 eV is intrinsic electron trap induced by Ce~(3+) doping in LPS host and the other trap is formed by the both impact of (V_o)~·· and Ca_(Lu)~× defects.
机译:Lu_2SI_2O_7(LPS)的单晶:0.5%Ce,CE,0.1%CA由Czochralski方法生长。测量X射线激发发光(XEL),光致发光激发(PLE),光致发光(PL)和透射谱。作为增长的LPS:Ce,Ca样品具有优异的光学质量,透射率为81%。两个吸收峰位定位在300和350nm处,分别对应于Ce〜(3+)的电子转变为4F -1和5d_2。根据高斯配件,LPS的XEL曲线:CE,CA可以分别安装在378和407nm的两个峰。发现LPS中的CA〜(2+)引入更多的氧空位,导致LPS的发光效率降低:CE。通过热刺激的发光(TSL)测量,在LPS:CE,CA中发现了两种电荷陷阱,其能量深度为1.20和1.47eV。 1.20eV的捕集器是由Ce〜(3+)掺杂在LPS主机中的内在电子捕集器,另一个陷阱由(V_O)〜...和CA_(LU)〜×缺陷的两种影响形成。

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