首页> 外文会议>International Conference on Materials Science Technology >Deposition of Cu_2ZnSnS_4 Thin Film by Pulsed Laser Deposition and Assembly of Thin Film Solar Cell with the Novel Structure of FTO/CdS/Cu_2ZnSnS_4/Mo
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Deposition of Cu_2ZnSnS_4 Thin Film by Pulsed Laser Deposition and Assembly of Thin Film Solar Cell with the Novel Structure of FTO/CdS/Cu_2ZnSnS_4/Mo

机译:通过脉冲激光沉积和薄膜太阳能电池组装沉积Cu_2ZNSS_4薄膜,具有FTO / CDS / CU_2ZNSNS_4 / MO的新颖结构

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Cu_2ZnSnS_4 (CZTS) thin film was successfully prepared by pulsed laser deposition using CZTS nanocrystal as a source and the thin film solar cell with the novel structure of FTO/CdS/CZTS/Mo was assembled. At the laser incident energy of 6 J·cm~(-2), the chemical composition of the CZTS thin film was Cu_(1.74)Zn_(0.80)Sn_(1.00)S_(4.04), near to stoichiometric ratio. The thin film solar cell with the novel structure of FTO/CdS/CZTS/Mo gave short circuit photocurrent density of 1.01 mA·cm~(-2), open circuit voltage of 0.39 V, and fill factor of 0.485, corresponding to the photoelectric conversion efficiency of 0.19% at the illumination (Air Mass 1.5, 100 mW·cm~(-2)).
机译:Cu_2ZNS_4(CZTS)通过使用CZTS纳米晶体作为源极和薄膜太阳能电池组装了CTO / CDS / CZTS / MO的新结构,通过脉冲激光沉积成功制备了薄膜。在6J·cm〜(-2)的激光入射能中,CZTS薄膜的化学成分是Cu_(1.74)Zn_(0.80)Sn_(1.00)S_(4.04),靠近化学计量比。薄膜太阳能电池具有新颖的FTO / CDS / CZTS / MO结构,使得短路光电流密度为1.01mA·cm〜(-2),开路电压为0.39V,填充因子为0.485,对应光电照明(空气质量1.5,100mW·cm〜(-2))的转化效率为0.19%。

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