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Effect of Dopants on the Microwave Magnetic Characteristics of FeCoBM-Al_2O_3 Soft Magnetic Thin Films

机译:掺杂剂对FecoBM-AL_2O_3软磁薄膜微波磁特性的影响

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A series of FeCoBM (M=Nb, Zr, Hf, Mo, Ta, Ti)-Al_2O_3 films were prepared on glass and polymer substrates by means of RF magnetron co-sputtering. Effect of dopants on the soft magnetic properties and microwave magnetic characteristics of FeCoBM-Al_2O_3 Thin Films were studied. To further tailor the magnetic characteristics of the films, the (Fe_(40)Co_(40)B_(20))_(94.5)Hf_(2.5) -(Al_2O_3)_3 film was annealed at 200 to 400°C for 60 min. As a consequence, the (Fe_(40)Co_(40)B_(20))_(94.5)Hf_(2.5)-(Al_2O_3)_3 film annealed at 350°C exhibit excellent properties with high saturation magnetization of 1197 kA/m, high resonant frequency of 1.76 GHz, and the real part of permeability is about 600, which is maintained up to 1.5GHz. These results show that the presented films possesses potential in designing micro-magnetic devices for Monolithic Microwave Integrated Circuit (MMIC) and surface mount technology (SMT)industry.
机译:通过RF磁控管共溅射在玻璃和聚合物基板上制备一系列Fecobm(M = Nb,Zr,HF,Mo,Ta,Ti)-al_2O_3薄膜。研究了掺杂剂对FecoBM-AL_2O_3薄膜软磁性和微波磁特性的影响。为了进一步定制薄膜的磁特性,(Fe_(40)CO_(40)B_(20))_(94.5)HF_(2.5) - (2.5) - (AL_2O_3)_3膜在200至400℃下退火60分钟。因此,(Fe_(40)CO_(40)B_(20))_(94.5)HF_(2.5) - (AL_2O_3) - (AL_2O_3)_3薄膜在350°C中退火,具有1197ka / m的高饱和磁化强度的优异性能,高谐振频率为1.76GHz,渗透率的真正部分约为600,维持高达1.5GHz。这些结果表明,所示的薄膜具有设计用于整体微波集成电路(MMIC)和表面贴装技术(SMT)行业的微磁性装置的潜力。

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